Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

GaN p-i-n rectifiers with 4 mu m thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer ba...

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Published inJournal of electronic materials Vol. 30; no. 3; pp. 147 - 155
Main Authors Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Zhang, A. P., Ren, F., Pearton, S. J., Chyi, J. -I., Nee, T. -E., Chou, C. -C., Lee, C. -M.
Format Journal Article
LanguageEnglish
Published Warrendale Springer Nature B.V 01.03.2001
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Summary:GaN p-i-n rectifiers with 4 mu m thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from < 10 super(14) cm super(-3) to 2-3 x 10 super(16) cm super(-3)), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 mu m, while deep level concentrations were [similar to]10 super(16) cm super(-3).
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-001-0008-0