Properties of AlxGa1− xAs with an AlAs buffer layer on Si substrates grown by metalorganic vapor phase epitaxy

• Published in: Journal of crystal growth Vol. 108; no. 3; pp. 615 - 620
• Main Authors: Bernussi, A.A., Iikawa, F., Motisuke, P., Basmaji, P.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.1991
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(91)90240-6

We present the details of growth by metalorganic vapor phase epitaxy and characterization of undoped and Sn doped Al x Ga 1− x As (0⩽ x ⩽ 0.3) on Si substrates with AlAs buffer layer. Double X-ray diffraction has been performed on these samples and the estimated dislocation density is in the order of 8x10 6 cm -2. The carrier concentration in these samples were obtained by Schubnikov-De Haas effect and the observed oscillations compare very well with the Al x Ga 1− x As grown on GaAs substrates. The photoluminescence efficiency in the Sn-doped Al x Ga 1− x As/ Si sample is about 640 times greater than in the undoped one and this is attributed to annihilation of non-radiative centers by Sn atoms. The biaxial stress in these films is estimated from the peak positions in the photoluminescence spectra measured as a function of temperature.