Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

• Published in: Nanotechnology Vol. 35; no. 44; pp. 445202 - 445211
• Main Authors: Luo, Binbin, Zhang, Conglin, Meng, Wei, Xiong, Wen, Yang, Min, Yang, Linlong, Zhu, Bao, Wu, Xiaohan, Ding, Shi-Jin
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 28.10.2024
• Subjects: atomic layer deposition; indium tin oxide; nano-films; thin-film transistor; oxide semiconductor nano-films; thin-film transistor; atomic layer deposition
• ISSN: 0957-4484; 1361-6528; 1361-6528
• DOI: 10.1088/1361-6528/ad6c56

Sn-doped indium oxide (ITO) semiconductor nano-films are fabricated by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium (TMIn), tetrakis(dimethylamino)tin (TDMASn), and O2 plasma as the sources of In, Sn and O, respectively. A shared temperature window of 150  200 °C is observed for the deposition of ITO nano-films. The introduction of Sn into indium oxide is found to increase the concentration of oxygen into the ITO films and inhibit crystallization. Furthermore, two oxidation states are observed for In and Sn, respectively. With the increment of interfaces of In-O/Sn-O in the ITO films, the relative percentage of In3+ ions increases and that of Sn4+ decreases, which is generated by interfacial competing reactions. By optimizing the channel component, the In0.77Sn0.23O1.11 thin-film transistors (TFTs) demonstrate high performance, including μFE of 52.7 cm2/Vs, and a high ION/IOFF of 5×109. Moreover, the devices show excellent positive bias temperature stress stability at 3 MV/cm and 85 °C, i.e., a minimal Vth shift of 0.017 V after 4 ks stress. This work highlights the successful application of Sn-doped indium oxide semiconductor nano-films by ALD for TFTs.