Spectrophotometry of ion implanted silicon carbide thin films

The optical properties of thin films of silicon carbide prepared by the implantation of C 2H 2 + ions into silicon evaporated onto a sapphire substrate and subsequently annealed at three different temperatures, 500, 600 and 800°C have been studied using spectrophotometry. The real and imaginary part...

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Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 116; no. 1; pp. 338 - 341
Main Authors Laine, A.D., Mezzasalma, A.M., Rizzo, S., Mondio, G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.1996
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Summary:The optical properties of thin films of silicon carbide prepared by the implantation of C 2H 2 + ions into silicon evaporated onto a sapphire substrate and subsequently annealed at three different temperatures, 500, 600 and 800°C have been studied using spectrophotometry. The real and imaginary parts of the dielectric constant show systematic variations which can be attributed to the degree of amorphisation which is in turn related to the annealing temperature.
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(96)00128-0