Design of four-state DRAM using novel MOSFETs

• Published in: International journal of electronics letters Vol. 6; no. 3; pp. 249 - 259
• Main Author: Karmakar, S.
• Format: Journal Article
• Language: English
• Published: Abingdon Taylor & Francis 03.07.2018; Taylor & Francis Ltd
• Subjects: Design modifications; DRAM; Field effect transistors; Four state; Memory devices; Memory management; Metal oxide semiconductors; MOSFETs; QDG-QDCFET; quantum well; Random access memory; semiconductor; Semiconductor devices; SWSFET; VLSI

Dynamic random-access memory (DRAM) is also very compact memory device which needs to refresh periodically. Modification of channel region and gate regions of a metal oxide semiconductor field-effect transistor (MOSFET) can produce four states in their transfer characteristics which help them to han...