Design of four-state DRAM using novel MOSFETs

Dynamic random-access memory (DRAM) is also very compact memory device which needs to refresh periodically. Modification of channel region and gate regions of a metal oxide semiconductor field-effect transistor (MOSFET) can produce four states in their transfer characteristics which help them to han...

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Bibliographic Details
Published inInternational journal of electronics letters Vol. 6; no. 3; pp. 249 - 259
Main Author Karmakar, S.
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis 03.07.2018
Taylor & Francis Ltd
Subjects
Design modifications
DRAM
Field effect transistors
Four state
Memory devices
Memory management
Metal oxide semiconductors
MOSFETs
QDG-QDCFET
quantum well
Random access memory
semiconductor
Semiconductor devices
SWSFET
VLSI
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Summary:Dynamic random-access memory (DRAM) is also very compact memory device which needs to refresh periodically. Modification of channel region and gate regions of a metal oxide semiconductor field-effect transistor (MOSFET) can produce four states in their transfer characteristics which help them to handle more number of bits. Compact design and increased bit-handling capability of the four-state DRAM based on modified MOSFET will help to increase the information density per unit area.
ISSN:2168-1724
2168-1732
DOI:10.1080/21681724.2017.1357194