Early nucleation on the Si( [formula omitted])-2×1 surface

• Published in: Surface science Vol. 514; no. 1; pp. 327 - 331
• Main Authors: Pi, T.-W, Ouyang, C.-P, Wen, J.-F, Tien, L.-C, Hwang, J, Cheng, C.-P, Wertheim, G.K
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 10.08.2002; Amsterdam Elsevier Science; New York, NY
• Subjects: Chlorine; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Germanium; Growth; Oxygen; Photoelectron spectroscopy; Physics; Silicon; Single crystal epitaxy; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Oxygen; Chlorine; Growth; Single crystal epitaxy; Germanium; Silicon; Photoelectron spectroscopy; Crystal growth; Crystal nucleation; Crystal faces; Rough surfaces; Surface topography; Experimental study; Synchrotron radiation; Surface structure
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(02)01648-5

The analysis of synchrotron radiation Si 2p core-level photoemission spectra provides fruitful information about the interface structure. A constraint on layer-wise intensities, based on the inelastic mean-free-path, is used to extract the 2p binding energy shifts of the first three outer layers. Both clean and adsorbate-covered surfaces have been successfully analyzed. The results for the clean Si(0 0 1)-2×1 surface, which reflect both the strain due to the reconstruction and changes in final-state screening, are in very good agreement with theory. However, for adsorbate-covered surfaces charge-flow, due to the electronegativity difference between Si and adsorbate atoms, dominates the shifts. Results for prototypical interfaces, with the adsorbates Ge, Cl, and oxygen, are presented.