Scanning Capacitance Microscopy (SCM) Applications in Failure Analysis

Scanning capacitance microscopy (SCM) has proven to be an effective tool for investigating doping-related failure mechanism in ICs. The examples in this article show how the author used SCM to solve various problems including premature breakdown due to pattern misalignment, threshold voltage variati...

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Bibliographic Details
Published inElectronic device failure analysis Vol. 13; no. 4; pp. 14 - 19
Main Author Wang, Xiang-Dong
Format Magazine Article
LanguageEnglish
Published ASM International 01.11.2011
Subjects
Capacitance
Case studies
Chips
Devices
Dopants
Failure analysis
Microscopy
Profiling
Scanning electron microscopy
Semiconductor industry
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Summary:Scanning capacitance microscopy (SCM) has proven to be an effective tool for investigating doping-related failure mechanism in ICs. The examples in this article show how the author used SCM to solve various problems including premature breakdown due to pattern misalignment, threshold voltage variations caused by poly gate doping anomalies, and source-drain leakage due to channeling effects.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1537-0755
DOI:10.31399/asm.edfa.2011-4.p014