A high-efficiency vertical-cavity surface-emitting switching laser fabricated with post-growth cavity mode positioning

• Published in: IEEE photonics technology letters Vol. 5; no. 6; pp. 634 - 636
• Main Authors: Evaldsson, P.A., Taylor, G.W., Cooke, P.W., Sargood, S.K., Kiely, P.A., Docter, D.P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.1993; Institute of Electrical and Electronics Engineers
• Subjects: Dielectrics; Etching; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Laser modes; Laser optical systems: design and operation; Mirrors; Optical computing; Optical surface waves; Optics; Physics; Reflectivity; Resonators, cavities, amplifiers, arrays, and rings; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; Vertical cavity laser; Temperature dependence; Continuous wave; Reflectors; Semiconductor lasers; Output power; Surface emitting laser; Heterojunctions; Threshold current; Experimental study; Switching
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.219693

The first room-temperature continuous-wave (CW) operation of the double heterostructure optoelectronic switching laser implemented as a vertical-cavity laser is described. A deposited dielectric top reflector of SiO/sub 2//TiO/sub 2/ allowed the use of a cavity etch back technique after the sample was grown, to position the cavity mode at the desired wavelength. Room temperature CW threshold currents as low as 4.8 mA for a 14- mu m-diameter device were obtained with slope efficiencies of 0.45 mW/mA. The maximum CW output power was 2.5 mW and the resistivity was 4*10/sup -4/ Omega cm/sup 2/.< >