Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

This work is devoted to finding the optimal parameters of the HgTe/CdHgTe multi-quantum-well structure for the generation of two-dimensional plasmon-phonons under optical excitation. It is shown that a decrease in the bandgap and an increase in the number of quantum wells lead to two consequences. T...

Full description

Saved in:
Bibliographic Details
Published inJournal of applied physics Vol. 134; no. 13
Main Authors Aleshkin, V. Ya, Rudakov, A. O., Morozov, S. V.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 07.10.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:This work is devoted to finding the optimal parameters of the HgTe/CdHgTe multi-quantum-well structure for the generation of two-dimensional plasmon-phonons under optical excitation. It is shown that a decrease in the bandgap and an increase in the number of quantum wells lead to two consequences. The first is a decrease in the nonequilibrium carrier threshold concentration and the threshold power density of optical excitation required for the plasmon-phonon gain. The second is a significant (tens of times) decrease in the effective refractive index of the generated plasmon-phonons, which improves the output of the plasmon-phonon radiation from the edge of the structure. The value of the optimal bandgap and the optimal number of quantum wells in the structure for plasmon-phonon gain are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0160727