Tensile Deformation of Si Single Crystals at High Temperatures

• Published in: Materials science forum Vol. 1016; pp. 1443 - 1447
• Main Authors: Tanaka, Masaki, Okuyama, Yelm, Morikawa, Tatsuya, Suzuki, Tubasa, Fujise, Jun, Ono, Toshiaki
• Format: Journal Article
• Language: English
• Published: Trans Tech Publications Ltd 05.01.2021
• Subjects: Silicon; Electron Backscattered Diffraction; Work-Hardening; Single Crystals; Tensile Test
• ISSN: 0255-5476; 1662-9752; 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.1016.1443

Czochralski silicon single crystals were deformed in tensile tests along the direction at between 1173 K and 1373. Yield point phenomenon were observed in the specimens deformed at below 1273 K while continues yield was observed in the specimens deformed at above 1323 K. It is due to the effect of dislocation starvation in the used crystals. Work-hardening rates in stage II were consistent with those reported in fcc crystals such as copper. The onset of stage II was found to be active before the Schmid factor of the second slip system becomes larger than that of the primary slip system. Electron backscattered diffraction images indicated clear kink bands near grips and in the parallel portion. The kink bands were formed at the middle of stage I, which suggest that the formation of kink bands is a trigger of stage II.