High-power transverse micro-stack weakly coupled laser diode bars

Transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. Micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapor deposition (MOCVD) and laser diode bar...

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Bibliographic Details
Published inMicroelectronics Vol. 39; no. 12; pp. 1580 - 1582
Main Authors Lei, Zhang, Bifeng, Cui, Weiling, Guo, Zhiqun, Wang, Guangdi, Shen
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.2008
Subjects
High power
Laser bar
Transverse micro-stack
Tunnel regeneration
Weakly coupled
Weakly coupled
42.55.Px
Laser bar
71.55.Eq
High power
Tunnel regeneration
Transverse micro-stack
85.60.Bt
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Summary:Transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. Micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapor deposition (MOCVD) and laser diode bars with 50% fill factors were fabricated. Experiments show that the insulated recesses strongly affect the properties of the bars. When the recess depth is less than 1.13μm, the bars do not work well. By optimizing the insulated recess depth, threshold current can be reduced to 7.05A, the optical power exceeds 79W under 50A driving current and the slope efficiency reaches 1.81W/A.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2008.03.009