A compact model of DC I–V characteristics for depleted Ga2O3 MOSFETs

• Published in: Microelectronics Vol. 140; p. 105920
• Main Authors: Jia, Xiaole, Wang, Yibo, Yang, Jinyu, Liu, Yan, Hao, Yue, Han, Genquan
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2023
• Subjects: Compact model; Ga2O3; MOSFET; TCAD simulation; MOSFET; Ga2O3; TCAD simulation; Compact model
• ISSN: 1879-2391; 1879-2391
• DOI: 10.1016/j.mejo.2023.105920

In this article, we present a novel behavioral compact model based on the hyperbolic tangent function that accurately reproduces the DC current-voltage (I–V) characteristics of the depleted Ga2O3 MOSFET. The proposed model fully explores and accounts for the effects of the spacing between the n+ region and the gate metal, as well as the gate-length scaling on the static electric properties of Ga2O3 MOSFETs. We demonstrate the effectiveness of our model by matching the I–V curves obtained from simulations and experiments, and good agreements are achieved by appropriately adjusting the fitting parameters. In addition, we compare the calculated transconductance and output conductance with the numerically simulated results and observe good agreements. The proposed model is expected to be a valuable tool for circuit design involving depleted Ga2O3 MOSFETs. It provides a more accurate and efficient means of simulating the behavior of these devices, which can aid in the development of new and innovative circuit designs. Overall, our model represents a significant contribution to the field of Ga2O3 MOSFET research and has the potential to facilitate the continued advancement and optimization of this technology.