One step rapid synthesis of mesoporous high surface area Sn1-xSbxO2: Electrochemical and scanning tunneling spectroscopic studies
High surface area nanoparticles of antimony doped tin oxide are synthesized for the first time by one step solution combustion method using tin oxalate and antimony chloride as precursors. The synthesis method is rapid and gives particles of sizes 9–13 nm. The material has a specific surface area of...
Saved in:
Published in | The Journal of physics and chemistry of solids Vol. 123; pp. 355 - 363 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.12.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | High surface area nanoparticles of antimony doped tin oxide are synthesized for the first time by one step solution combustion method using tin oxalate and antimony chloride as precursors. The synthesis method is rapid and gives particles of sizes 9–13 nm. The material has a specific surface area of 84 m2/g as estimated by Brunaure-Emmett-Teller (BET) model. The structural properties, surface morphologies, electrical and electrochemical properties are studied as a function of the dopant concentration. Effect of dopant concentration on X-ray diffraction (XRD) patterns shows some noticeable changes in particle size. Solid state UV spectroscopy demonstrates that due to the antimony doping, the band gap of SnO2 decreases significantly. Scanning tunneling spectroscopy (STS) and Hall Effect measurement are employed to characterize the electrical properties. The comparative study of Sn1-xSbxO2 (0.01 ≤ x ≤ 0.05) indicates that the composition of Sn0.95Sb0.05O2 has the lowest resistance with the highest carrier concentration. Electrochemical properties of the material were analyzed by cyclic voltammetry in both acidic and neutral media showing the Sn0.95Sb0.05O2 with high electron transfer properties.
•Solution –Combustion is a rapid one step synthesis method.•Antimony doped tin oxide has mesoporous high surface area.•Band gap is decreasing with increased dopant concentration.•STS and Hall measurements confirms the n type behavior.•Electrochemical study shows high electron transfer rate in the system. |
---|---|
ISSN: | 0022-3697 1879-2553 |
DOI: | 10.1016/j.jpcs.2018.08.023 |