Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptors

• Published in: Diamond and related materials Vol. 10; no. 3; pp. 453 - 458
• Main Authors: Uzan-Saguy, C., Reznik, A., Cytermann, C., Brener, R., Kalish, R., Bustarret, E., Bernard, M., Deneuville, A., Gheeraert, E., Chevallier, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2001; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects; Defects and impurities: doping, implantation, distribution, concentration, etc; Diffusion in solids; Diffusion of impurities; Electrical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Homoepitaxy (p-type); Hydrogen; Ion implantation; Low-field transport and mobility; piezoresistance; Passivation; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transport properties of condensed matter (nonelectronic); Ion implantation; Electrical properties; Hydrogen; Homoepitaxy (p-type); Passivation; Defects; Electrical conductivity; Epitaxial layers; Synthetic mineral; Diamonds; Doping profiles; Hall effect; Minerals; Experimental study; Impurity pair; Crystal doping; CVD; Nonmetals; Point defect cluster; Boron additions; Impurity diffusion; Deuterium additions; Deuteration; Diffusion; Carrier mobility; Carrier density; Defect formation
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/S0925-9635(00)00568-9

Drastic differences in diffusion of H (deuterium) in diamond, B-doped by ion implantation and during homo-epitaxial film growth, and its influence on electrical properties are found by SIMS depth profiling, and by electrical (Hall effect) measurements. Type IIa natural diamond, B-doped by ion implantation and high quality homo-epitaxial B-doped diamond films were subjected to D plasma treatment under similar conditions. The results of SIMS measurements clearly show a huge difference in D diffusion profile for these two samples. While the sample doped during growth was totally deuterated, the implanted one showed only minor D penetration. Electrical measurements indicated that while the homo-epitaxial samples became insulating or showed strong decrease in their free hole concentration following deuteration, the identical treatment to the B-ion implanted sample caused only slight changes in electrical properties. The electrical properties and their dependence on annealing are correlated with the deuterium diffusion into diamond. A possible mechanism of (B, H) and (defect, H) pair formation is suggested as a possible explanation of the observed differences.