Femtosecond pulsed laser-induced periodic surface structures on GaN/sapphire

Femtosecond pulsed laser-induced periodic surface structure on GaN/sapphire is reported in this paper. It was found that the period of the laser-induced ripples was much dependent on the incident laser fluence. Through finely adjusting laser fluence and pulse number, uniform ripples could be formed...

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Bibliographic Details
Published inApplied surface science Vol. 252; no. 5; pp. 1492 - 1497
Main Authors Wang, X.C., Lim, G.C., Ng, F.L., Liu, W., Chua, S.J.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.12.2005
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Femtosecond pulsed laser
GaN/sapphire
Laser fluence
Period
Physics
Ripple formation
Period
79.20.Ds
Laser fluence
Femtosecond pulsed laser
Ripple formation
GaN/sapphire
Inorganic compounds
Semiconductor materials
Gallium nitrides
Physical radiation effects
Pulsed lasers
Surface structure
79.20.Ds Femtosecond pulsed laser
Laser radiation
Periodic structures
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Summary:Femtosecond pulsed laser-induced periodic surface structure on GaN/sapphire is reported in this paper. It was found that the period of the laser-induced ripples was much dependent on the incident laser fluence. Through finely adjusting laser fluence and pulse number, uniform ripples could be formed on the sapphire surface. We attributed the formation of such periodic two-dimensional structures to optical interference of the incident laser light with scattered waves from a surface disturbance. Also, it was found that the GaN capping layer played a very important role in forming the periodic structures on the sapphire surface.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2005.02.142