Thin Film Growth of Germanium Selenides from PECVD of GeCl4 and Dimethyl Selenide

• Published in: Plasma chemistry and plasma processing Vol. 31; no. 2; pp. 251 - 256
• Main Authors: Whitham, Patrick J., Strommen, Dennis P., Lau, Lisa D., Rodriguez, René G.
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.04.2011
• Subjects: Characterization and Evaluation of Materials; Chemical vapor deposition; Chemistry; Chemistry and Materials Science; Classical Mechanics; Deposition; Dimethyl; Flow rate; Inorganic Chemistry; Mechanical Engineering; Original Paper; Selenides; Tetrachlorides; Thin films; Toxicity; Germanium selenide PECVD; Raman spectroscopy; Dimethyl selenide
• ISSN: 0272-4324; 1572-8986
• DOI: 10.1007/s11090-010-9278-8

Plasma enhanced chemical vapor deposition (PECVD) of germanium selenide thin films from germanium tetrachloride and dimethyl selenide was studied to determine the viability of these reagents for thin film deposition. Germanium tetrachloride and alkylselenides were selected as candidates for these reactions due to their lower toxicities and higher availabilities compared to the more typical substitutes: germane and hydrogen selenide in the formation of germanium selenides. Dimethyl selenide was used successfully for the deposition of germanium selenides. Variation in film stoichiometry was observed by the modification of reactant gas flow ratios. Relative mass flow rates were varied in order to determine their effect on germanium chalcogenide deposition, and the effect of these flow rate modifications on the film thickness, structural properties, and composition are reported.