Oscillations in the α-Si/Si(p)/Si(n) device: embedding- and correlation dimensions

Electrical oscillations appear in the NDR-region of the current controlled I– U characteristic of the α-Si/Si(p)/Si(n) device. The corresponding attractor is characterized by its correlation- and minimum embedding dimension, ν and m min, respectively. As the voltage U BE, applied in the Si(p)-region...

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Bibliographic Details
Published inChaos, solitons and fractals Vol. 21; no. 3; pp. 741 - 747
Main Authors Kyritsi, K., Anagnostopoulos, A.N., Bleris, G.L.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.07.2004
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Summary:Electrical oscillations appear in the NDR-region of the current controlled I– U characteristic of the α-Si/Si(p)/Si(n) device. The corresponding attractor is characterized by its correlation- and minimum embedding dimension, ν and m min, respectively. As the voltage U BE, applied in the Si(p)-region increases, m min remains constant, equal to 2, and ν increases obtaining always non-integer values, lower than m min.
ISSN:0960-0779
1873-2887
DOI:10.1016/j.chaos.2003.12.010