Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 80; no. 1-3; pp. 65 - 67 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
22.03.2001
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Online Access | Get full text |
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ISSN: | 0921-5107 |
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DOI: | 10.1016/S0921-5107(00)00590-0 |