Deposition of SiCxHyOz thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

• Published in: Plasma science & technology Vol. 20; no. 2; pp. 156 - 165
• Main Author: 谢庆;林浩凡;张帅;王瑞雪;孔飞;邵涛
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.02.2018
• Subjects: atmospheric-pressure plasma jet; epoxy resin; flashover voltage; nanosecond pulse; surface charge; 表面修正;环氧基;树脂;电影;绝缘;毫微秒;性能;开关设备
• ISSN: 1009-0630; 1009-0630
• DOI: 10.1088/2058-6272/aa97d0

Non-thermal plasma surface modification for epoxy resin（EP）to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulatedtransmission line.In this paper,a pulsed Ar dual dielectrics atmospheric-pressure plasma jet（APPJ）was used for Si CxHyOzthin film deposition on EP samples.The film deposition was optimized by varying the treatment time while other parameters were kept at constants（treatment distance：10 mm,precursor flow rate：0.6 l min-（-1）,maximum instantaneous power：3.08 k W and single pulse energy：0.18 m J）.It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18%and 13%when the deposition time was3 min,respectively.The flashover voltage reduced as treatment time increased.Moreover,all the surface conductivity,surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min.Other measurements,such as atomic force microscopy and scanning electron microscope for EP surface morphology,Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions,optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms.The results indicated that the original organic groups（C–H,C–C,C=O,C=C）were gradually replaced by the Si containing inorganic groups（Si–O–Si and Si–OH）.The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage.However,when the plasma treatment time was longer than 3 min,the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.