On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma

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Bibliographic Details
Published inVacuum Vol. 216; p. 112484
Main Authors Choi, Gilyoung, Efremov, Alexander, Lee, Dae-Kug, Cho, Choong-Ho, Kwon, Kwang-Ho
Format Journal Article
LanguageEnglish
Published 01.10.2023
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ISSN:0042-207X
DOI:10.1016/j.vacuum.2023.112484