Fabrication of height-controlled InAs quantum dots on GaAs surfaces by in situ AsBr3 etching and molecular beam epitaxy

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 13; no. 2-4; pp. 1151 - 1154
Main Authors Yang, T, Kohmoto, S, Nakamura, H, Asakawa, K
Format Journal Article
LanguageEnglish
Published 01.03.2002
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ISSN:1386-9477
DOI:10.1016/S1386-9477(02)00324-7