Crystal structure refinement, optical, magnetic, and X-band microwave shielding properties of Dy3+ doped Ni2Y-type strontium hexagonal ferrites

• Published in: Materials chemistry and physics Vol. 307; p. 128139
• Main Authors: Ghani, Muqaddas, Mohammed, J., Alomar, Taghrid S., AlMasoud, Najla, El-Bahy, Zeinhom M., Carol T, Tchouank Tekou, Harshapriya, P., Basandrai, D.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.2023
• Subjects: Band-gap; Coercivity; Crystalline structure; Microwave shielding; Phase formation; Band-gap; Microwave shielding; Phase formation; Coercivity; Crystalline structure
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/j.matchemphys.2023.128139

Ni2Y-type strontium hexaferrites having chemical dddof Sr1·8Ba0·2Ni2Fe12-xDyxO22 (x = 0.0, 0.1, 0.2) were made utilizing the sol-gel combustion technique. All samples' XRD patterns demonstrate the production of NiFe2O4 and Fe3O4 which are a phase that is intermediate in the synthesis of the required Ni2Y-type strontium hexaferrites. The FTIR indicates the presence of absorption peaks at about 557 and 432 cm−1, this shows the possibility of the formation of Y-type hexaferrites. UV-vis NIR spectroscopy analysis indicates that the energy band-gap of Y-type hexaferrites is affected by the increase in Dy3+ concentration. The values of the band-gap were found to be between 1.66 and 1.78 eV. According to the FESEM analysis, platelet-structure is formed with particles that range in size from 3.665 to 3.927 μm. The observed coercivity, saturation, and remnant magnetization first decreased with an increase in the concentration of Dy3+ for the sample having x = 0.1 and then increases for the sample with x = 0.2. The sample with the greatest amount of Dy3+ (i.e.x = 0.2) has a value of total shielding effectiveness of 27.5 dB. The prepared Ni2Y-type hexaferrites sample could be use for efficient shielding of microwaves in X-band. •Rietveld refined lattice parameters.•Sol-gel synthesized rare-earth doped Ni2–Y type SrBa-hexaferrites.•Tuned band-gap for electronic device application.•Total shielding effectiveness of −27.5 dB.