0.5-1-V, 90-400-mA, Modular, Distributed, 3 × 3 Digital LDOs Based on Event-Driven Control and Domino Sampling and Regulation

This article presents on-chip power delivery hardware comprised of nine event-driven (ED) digital low-dropout voltage regulators (LDOs) for a large digital load. The goal is to address the performance degradations in an LDO's accuracy and dynamic load regulation in the presence of parasitics in...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 56; no. 9; pp. 2781 - 2794
Main Authors Kim, Sung Justin, Kim, Dongkwun, Pu, Yu, Shi, Chunlei, Chang, Soo Bong, Seok, Mingoo
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This article presents on-chip power delivery hardware comprised of nine event-driven (ED) digital low-dropout voltage regulators (LDOs) for a large digital load. The goal is to address the performance degradations in an LDO's accuracy and dynamic load regulation in the presence of parasitics in the power grid of a load. In particular, we investigate the effects of power grid resistance (<inline-formula> <tex-math notation="LaTeX">R_{\mathrm {G}} </tex-math></inline-formula>), which becomes worse with the size of a digital load and technology scaling. Two critical problems that we address are: 1) the IR drop and 2) the dynamic voltage droop problems. Employing multiple LDOs across the power grid improves the IR drop for mainly better voltage sensing. To tackle the voltage droop problem, we distribute LDOs with ED control such that the LDO closest to a localized droop can instantly correct it. To further improve the feedback control latency, we also enhance each LDO with a novel domino sampling and regulation technique. We prototype the on-chip power delivery system consisting of <inline-formula> <tex-math notation="LaTeX">3 \times 3 </tex-math></inline-formula> digital LDOs in a 65-nm CMOS. We also devise the framework to analyze the stability of the multi-LDO system across <inline-formula> <tex-math notation="LaTeX">R_{\mathrm {G}} </tex-math></inline-formula> values. Measurements show that at 0.5-V (1 V) input, the single LDO exhibits 49.8-mV (94.1 mV) voltage droop for a load current change of 4.04 mA/0.1 ns (13.8 mA/0.2 ns) with a 0.1-nF integrated output capacitor. Also, the nine-LDO system achieves a current density of 248.8 mA/mm 2 (1.118.6 A/mm 2 ) at 0.5-V (1 V) input voltage.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2021.3069954