Temperature dependence of hole mobility in n-type InSb upon electron bombardment

The mobility of the minority carriers, in n-InSb was investigated from the photomagnetoelectric effect as a function of temperature in the range of 12–80 K prior to and after bombardment with 1 MeV average energy beta particles. The hole mobility shows a minimum near 40 K which can be due to the h-e...

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Published inSolid state communications Vol. 28; no. 12; pp. 989 - 992
Main Authors Euthymiou, P.C., Eftaxias, C.A., Rammos, E.A., Ravanos, C.E., Constandinides, S.P.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.1978
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Summary:The mobility of the minority carriers, in n-InSb was investigated from the photomagnetoelectric effect as a function of temperature in the range of 12–80 K prior to and after bombardment with 1 MeV average energy beta particles. The hole mobility shows a minimum near 40 K which can be due to the h-e scattering becoming predominant in the region where other scattering mechanisms are relatively weak. After bombardment the curves have the same form but higher mobilities. This is due to a decrease of h-e scattering resulting from the decrease of the electron concentration, as determined from independent measurements.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(78)90655-5