Junctionless nanowire transistors effective channel length extraction through capacitance characteristics

• Published in: Solid-state electronics Vol. 208; p. 108734
• Main Authors: Silva, Everton M., Trevisoli, Renan, Doria, Rodrigo T.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2023
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2023.108734

•Junctionless transistors effective channel length has been evaluated through capacitance analysis.•Effective length was extracted through the extrapolation of the maximum capacitance as a function of the mask length.•The extraction method has been applied to simulations and experimental data showing good agreement.•The effective channel length is about 10–15 nm longer then the mask length in all cases.•The longer effective length is explained by the depletion region under the spacers. This work aims to extract the effective channel length (LEFF) of Junctionless Nanowire Transistors (JNT) through the maximum gate capacitance of the devices. The LEFF extraction has been done by extrapolating the maximum gate capacitance as a function of the devices’ channel length (LMASK) and has shown that LEFF is around 10–15 nm longer than LMASK for devices of different channel doping concentrations.