Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully elimi...

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Bibliographic Details
Published inSolid-state electronics Vol. 128; pp. 92 - 101
Main Authors Tomaszewski, Daniel, Głuszko, Grzegorz, Łukasiak, Lidia, Kucharski, Krzysztof, Malesińska, Jolanta
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2017
Subjects
CMOS
Junction capacitance
MOSFET
Parameter extraction
Threshold voltage
MOSFET
CMOS
Threshold voltage
Junction capacitance
Parameter extraction
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Summary:An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2016.10.006