A Novel Three-State RF MEMS Switch Based on Origami Structure

• Published in: Journal of microelectromechanical systems Vol. 34; no. 3; pp. 276 - 282
• Main Authors: Han, Lei, Pan, Yutang, Liu, Saisai, Gao, Chuyuan, Cheng, Lifan
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2025; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Actuators; Bending; Capacitance; Coplanar waveguides; Deformation; displacement amplification mechanism; electrothermal drive; Force; Frequency ranges; Insertion loss; Microelectromechanical systems; Microswitches; Origami structure; Radio frequency; RF MEMS switch; Voltage
• ISSN: 1057-7157; 1941-0158
• DOI: 10.1109/JMEMS.2025.3553118

In this paper, we report a novel three-state Radio Frequency Microelectromechanical Systems (RF MEMS) switch, which is based on origami structure for large tunable capability. Combined with the origami structure, the switch can achieve the deep-on state by raising the height of the origami beam. This switch has been designed and fabricated successfully with the silicon process. Experimental results show that the origami beam can be raised to <inline-formula> <tex-math notation="LaTeX">76~\mu </tex-math></inline-formula>m at the deep-on state with an amplification factor of 12.6 compared to the on state. In the frequency range of 10-30 GHz, when the switch is at the on state, the insertion loss is better than −0.4 dB and the return loss is better than -18dB. At the deep-on state, the return loss achieves −31dB with the improvement of 13 dB. At the off state, the isolation of the switch is better than −20 dB. As a result, the presented switch based on origami structure can be a promising choice for low loss, high isolation, and large tunable range applications.[2024-0221]