Comparison of self-aligned silicide technologies for shallow CoSi2-contacts in VLSI-devices

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Bibliographic Details
Published inMicroelectronic engineering Vol. 19; no. 1-4; pp. 669 - 672
Main Authors Schäffer, C., Depta, D., Niewöhner, L.
Format Journal Article
LanguageEnglish
Published 01.09.1992
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ISSN:0167-9317
DOI:10.1016/0167-9317(92)90519-W