Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation
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Published in | Microelectronics and reliability Vol. 42; no. 12; pp. 1985 - 1989 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2002
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Online Access | Get full text |
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ISSN: | 0026-2714 |
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DOI: | 10.1016/S0026-2714(02)00099-9 |