AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system....

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Bibliographic Details
Published inElectronics (Basel) Vol. 7; no. 12; p. 416
Main Authors Geng, Kuiwei, Chen, Ditao, Zhou, Quanbin, Wang, Hong
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 10.12.2018
Subjects
Aluminum gallium nitrides
Assembly lines
Breakdown
Chemical vapor deposition
Current density
Current leakage
Direct current
Electric fields
Electric potential
Gallium nitrides
High electron mobility transistors
Investigations
Leakage current
MIS (semiconductors)
Organic chemicals
Passivity
Photoluminescence
Plasma enhanced chemical vapor deposition
Silicon dioxide
Silicon nitride
Silicon oxynitride
Voltage
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Summary:Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics7120416