Optical properties of as-prepared and irradiated In–Cd–Se thin films

Non-crystalline In 3 Cd 3 Se 94 thin films were papered by the thermal evaporation technique on glass substrates. The prepared films of a-In 3 Cd 3 Se 94 were irradiated by 60 Co γ-rays at different doses (100–400 kGy). The photoluminescence study confirms that the defect concentration decreases aft...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 33; no. 16; pp. 12663 - 12673
Main Authors Aly, K. A., Dahshan, A., Saddeek, Y.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.06.2022
Springer Nature B.V
Subjects
Absorptivity
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal defects
Dielectric strength
Dosimeters
Dosimetry
Energy gap
Gamma irradiation
Gamma rays
Glass substrates
Materials Science
Optical and Electronic Materials
Optical properties
Photoluminescence
Refraction
Refractivity
Thin films
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Summary:Non-crystalline In 3 Cd 3 Se 94 thin films were papered by the thermal evaporation technique on glass substrates. The prepared films of a-In 3 Cd 3 Se 94 were irradiated by 60 Co γ-rays at different doses (100–400 kGy). The photoluminescence study confirms that the defect concentration decreases after gamma irradiation which supports the variations in the optical parameters. The optical properties of the as-prepared and exposed to γ-rays In 3 Cd 3 Se 94 thin films have been obtained using the UV-spectrophotometer over 0.5–2.5 μm spectral range. With the increase of γ-doses, the index of refraction ( n ) was increased, whereas the optical band gap ( E g ) was decreased. The estimated values of the oscillator strength E d , static index of refraction n o , and zero frequency dielectric constant ε o are increased with an increase of the γ-doses while the value of the oscillator energy E o is reduced. The absorption coefficient was discovered to rise as the gamma doses were increased. The decrease in the optical energy gap of In 3 Cd 3 Se 94 chalcogenide films with the γ-doses can be attributed to the rise in the defects after irradiation. The gamma irradiation caused a rise in the absorption coefficient as well as a change in the optical characteristics, which may be used for industrial dosimetry.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-022-08215-8