Effect of the electrical inhomogeneity on the magnetocapacitance sign change in the HoxMn1−xS semiconductors upon temperature and frequency variation

• Published in: Journal of materials science. Materials in electronics Vol. 34; no. 4; p. 284
• Main Authors: Aplesnin, S. S., Sitnikov, M. N., Kharkov, A. M., Abdelbaki, H.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.02.2023; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemical elements; Chemistry and Materials Science; Crossovers; Debye temperature; Dependence; Dielectric loss; Dielectric properties; Dipoles; Electric fields; Frequency ranges; Frequency variation; Holmium; Inhomogeneity; Magnetic fields; Materials Science; Optical and Electronic Materials; Semiconductors; Solid solutions; Temperature
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-022-09731-3

The dielectric properties of the Ho x Mn 1−x S ( x  ≤ 0.1) semiconductors in the frequency range of 100 < ω < 10 6  Hz at temperatures of 80−550 K have been studied. The temperature crossover from the Debye behavior of the permittivity to the resonance behavior has been found at low holmium concentrations in the compounds. The frequency of the crossover from the migration to dipole orientation polarization with the minimum dielectric loss has been determined. The positive and negative magnetocapacitances for two concentrations of holmium ions have been found. The temperature and frequency ranges of the magnetocapacitance sign change have been established and this phenomenon has been explained using the model of the transition from electrically inhomogeneous to homogeneous states.