1200V reverse conducting IGBT

This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology...

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Published in2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs pp. 133 - 136
Main Authors TAKAHASHI, Hideki, YAMAMOTO, Aya, AONO, Shinji, MINATO, Tadaharu
Format Conference Proceeding
LanguageEnglish
Published Tokyo IEEE 2004
IEEE Japan
Subjects
Applied sciences
Charge carrier lifetime
Diodes
Electronics
Exact sciences and technology
Insulated gate bipolar transistors
Other multijunction devices. Power transistors. Thyristors
Power bipolar transistors
Power FETs
Power semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Diode
Insulated gate bipolar transistor
Carrier lifetime
Wafer
Power transistor
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Summary:This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the fabricated 1200 V/100 A chip can achieve a level comparable to those of conventional 3rd generation PT-type IGBT and FWD pair. The trade off with Vce(sat) and turn-off loss and the correlation between Vf and Err is almost the same as the conventional 3rd generation PT-type IGBT and FWD pair.
ISBN:9784886860606
4886860605
DOI:10.1109/WCT.2004.239844