A comparison electric-dielectric features of Al/p-Si (MS) and Al/ (Al2O3:PVP)/p-Si (MPS) structures using voltage–current (V–I) and frequency–impedance (f–Z) measurements

• Published in: Journal of materials science. Materials in electronics Vol. 33; no. 27; pp. 21963 - 21975
• Main Authors: Akin, B., Farazin, J., Altındal, Ş., Azizian-Kalandaragh, Y.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.09.2022; Springer Nature B.V
• Subjects: Aluminum oxide; Ambient temperature; Characterization and Evaluation of Materials; Chemistry and Materials Science; Dielectric properties; Electric fields; Electric potential; Emission analysis; Frequency ranges; Interlayers; Materials Science; Optical and Electronic Materials; Resistance factors; Shunt resistance; Silicon; Voltage
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-022-08984-2

In this work, both the Al-( p -Si) (MS) and Al-(Al 2 O 3 :PVP)-( p -Si) (MPS) structures were grown onto the same p -type Si wafer in the same conditions to determine the (Al 2 O 3 :PVP) organic-interlayer whether the MPS build improves performance or not. For this aim, first, X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM) was used to investigate the structure of the (Al 2 O 3 -PVP) inter-layer. Secondly, both the current–voltage ( I–V ) and capacitance/conductance-frequency ( C / G )- f measurements of them were performed at ambient temperature to the comparison of their electric and dielectric properties. Energy-dependence profile of surface states ( N ss ) was extracted from the positive bias I–V data by considering the voltage-dependence of BH and n . We found that the (Al 2 O 3 : PVP) inter-layer leads to a decrease in surface-states ( N ss ), ideality-factor ( n ), leakage-current, series-resistance ( R s ), and increase in barrier (BH), shunt resistance ( R sh ), rectification-ratio (RR =  I for. / I rev . at ± 6 V). Dielectric permittivity and loss ( ε′, ε ″), loss-tangent (tan δ ), real & imaginary components of electric modulus ( M′, M″ ), and ac-conductivity ( σ ac ) were extracted from the C - f and G - f measurements in the wide frequency range of 200 Hz-1 MHz at 1.5 V. The observed higher values in the ε′ and ε″ at lower frequencies for MS and MPS structures were attributed to the N ss and easy polarization of interlayer under electric field.