VO2 thin films fabricated by reduction of thermal evaporated V2O5 under N2 flow

• Published in: Materials letters Vol. 299; p. 130086
• Main Authors: Manousou, Dimitra K., Gardelis, Spiros, Calamiotou, Maria, Syskakis, Emmanuel
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.09.2021; Elsevier BV
• Subjects: Hysteresis loops; Materials science; Physical vapor deposition; Semiconductor-to-Metal Τransition; Thermal evaporation; Thin films; Vanadium dioxide thin films; Vanadium oxides; Vanadium pentoxide; Physical vapor deposition; Vanadium pentoxide; Vanadium dioxide thin films; Semiconductor-to-Metal Τransition; Thermal evaporation
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2021.130086

•Thermally evaporated V2O5 thin films reduced to VO2(M1) films under N2 flow.•X-Ray diffraction and estimated energy band gaps denote high-quality VO2(M1) films.•Sharp electrical resistance change (3–4 orders of magnitude) at TSMT of VO2 films.•Sharp transmittance change at λ= 1550 nm (40–45%) at TSMT of VO2 films.•High performance (lifetime and reliability) of titanium boat for the target. VO2 thin films were fabricated by thermal evaporation of V2O5 on quartz and glass and subsequent reduction in nitrogen (N2). This Physical Vapor Deposition (PVD) method resulted in high-quality single phase VO2(M1) films with sharp changes in resistance (3–4 orders of magnitude) and transmittance (40–45%) at λ= 1550 nm accompanied by narrow hysteresis loops (~ 4–5 K) around the Semiconductor-to-Metal Transition (SMT).