Oxidation behavior of Al-Cr-Nb-Si-Zr high entropy nitride thin films at 850 °C

• Published in: Corrosion science Vol. 187; p. 109467
• Main Authors: Wang, Jian-Jie, Ouyang, Fan-Yi
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier Ltd 15.07.2021; Elsevier BV
• Subjects: Aluminum oxide; Chromium; Diffusion markers; Entropy; Gold; Gravimetric analysis; High entropy materials; Multi-element oxidation; Nanoparticles; Niobium; Nitride films; Nitrides; Oxidation; Oxidation kinetics; Reaction kinetics; Scale (corrosion); Silicon; Species diffusion; Thin films; Zirconium dioxide; Multi-element oxidation; Oxidation kinetics; High entropy materials; Diffusion markers; Nitride films
• ISSN: 0010-938X; 1879-0496
• DOI: 10.1016/j.corsci.2021.109467

[Display omitted] •(AlCrSiNbZr)N1-x thin films possess good oxidation resistance at 850 °C in air.•Microstructure of (AlCrSiNbZr)N1-x films after oxidation tests was analyzed by TEM.•Triple scales, Al2O3/ Cr2O3/ Al2O3 were observed after oxidation test.•Kinetics of scale growth was investigated by diffusion markers and TGA tests. Oxidation behavior of Al-Cr-Nb-Si-Zr high entropy nitride (HEN) thin films was investigated in air atmosphere at 850 °C. The thermo-gravimetric analyzer (TGA) results show that oxidation kinetics of HEN films followed the parabolic rate law. A triple oxide layer, Al2O3/Cr2O3/Al2O3, was found with nanocrystalline ZrO2 dispersed in the oxide scales. Through Au nanoparticles as diffusion markers, the formation of the scales was mainly due to the outward diffusion of cations in the beginning, and the dominant diffusion species were changed to inward diffusion of anions in longer oxidation periods.