Characteristics of HfO2/Hf-based bipolar resistive memories

Nano-scale Hf/HfO2-based resistive random-access-memory （RRAM） devices were fabricated. The cross-over between top and bottom electrodes of RRAM forms the metal-insulator-metal sandwich structure. The electrical responses of RRAM are studied in detail, including forming process, SET process and RESE...

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Bibliographic Details
Published in半导体学报：英文版 no. 6; pp. 80 - 84
Main Author 毕津顺 韩郑生
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
HfO2
SET
双极
夹层结构
电特性
电阻式
记忆
随机存取存储器
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Summary:Nano-scale Hf/HfO2-based resistive random-access-memory （RRAM） devices were fabricated. The cross-over between top and bottom electrodes of RRAM forms the metal-insulator-metal sandwich structure. The electrical responses of RRAM are studied in detail, including forming process, SET process and RESET process. The correlations between SET voltage and RESET voltage, high resistance state and low resistance state are dis- cussed. The electrical characteristics of RRAM are in a strong relationship with the compliance current in the SET process. The conduction mechanism ofnano-scale Hf/HfO2-based RRAM can be explained by the quantum point contact model.
Bibliography:11-5781/TN
Nano-scale Hf/HfO2-based resistive random-access-memory （RRAM） devices were fabricated. The cross-over between top and bottom electrodes of RRAM forms the metal-insulator-metal sandwich structure. The electrical responses of RRAM are studied in detail, including forming process, SET process and RESET process. The correlations between SET voltage and RESET voltage, high resistance state and low resistance state are dis- cussed. The electrical characteristics of RRAM are in a strong relationship with the compliance current in the SET process. The conduction mechanism ofnano-scale Hf/HfO2-based RRAM can be explained by the quantum point contact model.
hafnium dioxide; bipolar; resistive random-access-memory; conductive filament; quantum point con- tact model
ISSN:1674-4926
DOI:10.1088/1674-4926/36/6/064010