The systematic variation of the EPR parameters of manganese in II–VI semiconductors

It is shown that the correlation of the spin-Hamiltonian parameters of transition elements in semiconductors with the changes in covalency and lattice distortion suggested by others can be put on a quantitative basis. The measured spin-Hamiltonian parameters of manganese in six cubic II–VI semicondu...

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Bibliographic Details
Published inSolid state communications Vol. 60; no. 3; pp. 217 - 222
Main Authors Koh, A.K., Miller, D.J.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1986
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron paramagnetic resonance and relaxation
Exact sciences and technology
Iron group (3d) ions and impurities (ti-cu)
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Physics
Cadmium Tellurides
Zinc Chalcogenides
Lattice distortion
Impurity
Transition metal Compounds
Theoretical study
Internuclear distance
Ionic radius
Cadmium Sulfides
EXAFS spectrometry
Inorganic compound
Spin Hamiltonian
Cadmium Chalcogenides
Zinc Sulfides
Electron paramagnetic resonance
Zinc Selenides
Zinc Tellurides
Charge transfer
Cadmium Selenides
Manganese
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Summary:It is shown that the correlation of the spin-Hamiltonian parameters of transition elements in semiconductors with the changes in covalency and lattice distortion suggested by others can be put on a quantitative basis. The measured spin-Hamiltonian parameters of manganese in six cubic II–VI semiconductors are linearly related to a dimensionless quantity based on a microscopic model of the local lattice distortion suggested by recent EXAFS results. The variation of the ESR parameters can be explained in terms of a modified Szigeti charge calculated from the dimensionless quantity.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(86)90449-7