The systematic variation of the EPR parameters of manganese in II–VI semiconductors
It is shown that the correlation of the spin-Hamiltonian parameters of transition elements in semiconductors with the changes in covalency and lattice distortion suggested by others can be put on a quantitative basis. The measured spin-Hamiltonian parameters of manganese in six cubic II–VI semicondu...
Saved in:
Published in | Solid state communications Vol. 60; no. 3; pp. 217 - 222 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
1986
Elsevier |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | It is shown that the correlation of the spin-Hamiltonian parameters of transition elements in semiconductors with the changes in covalency and lattice distortion suggested by others can be put on a quantitative basis. The measured spin-Hamiltonian parameters of manganese in six cubic II–VI semiconductors are linearly related to a dimensionless quantity based on a microscopic model of the local lattice distortion suggested by recent EXAFS results. The variation of the ESR parameters can be explained in terms of a modified Szigeti charge calculated from the dimensionless quantity. |
---|---|
ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(86)90449-7 |