Metamorphic growth of InAlAs/InGaAs MQW and InAs HEMT structures on GaAs

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 40; no. 9; pp. 2874 - 2878
• Main Authors: Joo, K.S., Chun, S.H., Lim, J.Y., Song, J.D., Chang, J.Y.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.08.2008; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; InAs 2DEG; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics; MBE; Metamorphic growth; Microelectronic fabrication (materials and surfaces technology); Molecular electronics, nanoelectronics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SPIN-FET; Transistors; Metamorphic growth; MBE; 85.75.Hh; 73.20.−r; 81.15.Hi; InAs 2DEG; SPIN-FET; Buffer layer; Photoluminescence; Multiple quantum well; Two-dimensional electron gas; X ray diffraction; Physical properties; Nanoelectronics; Field effect transistor; High electron mobility transistor; Microelectronic fabrication; Transmission electron microscopy; Strained layer; 73.20.-r; Molecular beam epitaxy; Electron mobility; Room temperature; Schottky barrier; Spintronics
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2008.01.014

The large electron mobility at room temperature and the absence of Schottky barrier to metals make InAs two-dimensional electron gas (2DEG) a good candidate for SPIN-FET (FET—field-effect-transistor) applications. So far the growth was done either on the InAlAs epilayers compositionally matched to InP substrates, or on Sb-based compound semiconductors. Here we aim to grow InAs 2DEG on GaAs substrates by using a strain-relaxing buffer layer. We introduce In 0.4Al 0.6As glue layer to the metamorphic structure and investigate the physical properties of InAlAs/InGaAs multi-quantum-well (MQW) structures via X-ray diffraction, transmission electron microscopy, and photoluminescence. We find that the use of As dimer instead of tetramer and the choice of proper growth temperature are essential for successful growth. InAs-inserted-channel InAlAs/InGaAs inverted high-electron-mobility transistor (HEMT) structures show promising results for SPIN-FET application.