Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition

• Published in: Journal of crystal growth Vol. 138; no. 1; pp. 75 - 80
• Main Authors: Krause, E., Hartmann, H., Menninger, J., Hoffmann, A., Fricke, Ch, Heitz, R., Lummer, B., Kutzer, V., Broser, I.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 02.04.1994; Elsevier
• Subjects: Cathodoluminescence, ionoluminescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ii-vi semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Photoluminescence; Physics; Stoichiometry; Inorganic compounds; Semiconductor materials; Transition element compounds; Photoluminescence; Doped materials; Zinc selenides; Indium additions; Cathodoluminescence; Experimental study; Defects; CVD; Time resolution; Lithium additions
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)90783-8

Thick poly-ZnSe layers used for optical components in infrared laser systems show strongly varying laser damage thresholds. This is due to differences in kind and concentration of carrier trapping defects in the material grown under various Se/Zn partial pressure ratios. The VI/II ratio determines a non-stoichiometric growth and determine an upper limit for the concentration of native defects. The optical properties of poly-ZnSe are studied by means of time-integrated and time-resolved photoluminescence (PL) as well as spatially resolved cathodoluminescence (CL). It is shown that samples grown in Se excess are of good quality and have the lowest defect concentrations. The changing of properties of non-stoichiometric grown samples by doping with Li and In in a post-grown diffusion process was also studied.