APA (7th ed.) Citation

Chou, S., Chen, Y., Lin, C., Chen, Y., Wu, S., Chen, H., & Chang, T. (2025). Effective Reduction of Current Collapse in AlGaN/GaN MISHEMT via Low-Temperature Nitriding Treatment. IEEE transactions on electron devices, 72(4), 2090-2094. https://doi.org/10.1109/TED.2025.3542010

Chicago Style (17th ed.) Citation

Chou, Sheng-Yao, Yan-Chieh Chen, Cheng-Hsien Lin, Yan-Lin Chen, Shuo-Bin Wu, Hsin-Chu Chen, and Ting-Chang Chang. "Effective Reduction of Current Collapse in AlGaN/GaN MISHEMT via Low-Temperature Nitriding Treatment." IEEE Transactions on Electron Devices 72, no. 4 (2025): 2090-2094. https://doi.org/10.1109/TED.2025.3542010.

MLA (9th ed.) Citation

Chou, Sheng-Yao, et al. "Effective Reduction of Current Collapse in AlGaN/GaN MISHEMT via Low-Temperature Nitriding Treatment." IEEE Transactions on Electron Devices, vol. 72, no. 4, 2025, pp. 2090-2094, https://doi.org/10.1109/TED.2025.3542010.