Properties of Ru-Doped Ca-Pr Manganate Thin Films Fabricated by PLD Technique

The Ca 0.85 Pr 0.15 Mn 1-y Ru y O 3 (y = 0, 0.04, 0.08, 0.12, 0.16, and 0.20) manganate thin films were prepared by pulsed laser deposition (PLD) technique. The X-ray diffraction (XRD) analysis revealed that the samples were single-phased with orthorhombic structure. The scanning electron microscopy...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 47; no. 10; pp. 3913 - 3916
Main Authors Phung, Quoc Thanh, Yu, Seong-Cho, Nguyen, Duc Tho, Hoang, Nam Nhat
Format Journal Article Conference Proceeding
LanguageEnglish
Published New York, NY IEEE 01.10.2011
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Charge carrier density
Cooling
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Hall effect
Lattices
Magnetic properties
Magnetocaloric effect
manganate
Manganese
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings; film growth and epitaxy
Other topics in materials science
Physics
Production techniques
pulsed laser deposition (PLD)
Surface treatment
Temperature measurement
thin film
Thin films
Magnetocaloric effect
Doping
Laser deposition
manganate
thin film
pulsed laser deposition (PLD)
Pulsed lasers
Magnetic properties
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Summary:The Ca 0.85 Pr 0.15 Mn 1-y Ru y O 3 (y = 0, 0.04, 0.08, 0.12, 0.16, and 0.20) manganate thin films were prepared by pulsed laser deposition (PLD) technique. The X-ray diffraction (XRD) analysis revealed that the samples were single-phased with orthorhombic structure. The scanning electron microscopy (SEM) images indicated that the samples were composed of homogeneous grains. The Hall-effect measurements showed that the carrier density and Hall mobility of films increased with increasing Ru-doped content. The magnetic field dependence of magnetization at various temperatures were measured by using the superconducting quantum interference device (SQUID) and showed that the increase of Ru-doping content induced the large Δ S change in broad range of temperature. This demonstrates a possible application of these materials in cooling devices as the relative cooling power (RCP) is proportial to -(Δ S ) max Δ TFWHM (where Δ TFWHM is the full width at half-maximum of Δ S ).
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2011.2154356