Patterned Bit Cell Arrangement and Broadening of Switching Field Distribution Caused by Magneto-Static Interactions

• Published in: IEEE transactions on magnetics Vol. 49; no. 1; pp. 478 - 482
• Main Authors: Xu, Shu, Liu, Jie, Chen, Jincai, Liu, Bo
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.2013; Institute of Electrical and Electronics Engineers
• Subjects: Bit cell arrangement; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Magnetic switching; Manufacturing; manufacturing induced deviations; Materials science; Media; Other topics in materials science; patterned media; Perpendicular magnetic recording; Physics; Switches; switching field distribution; Writing; Fabrication; switching field distribution; Bit cell arrangement; manufacturing induced deviations; Switching; Magnetic properties; patterned media
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.2012.2207733

Patterned media technology is a promising approach for future high density magnetic data storage. The bit-to-bit spacing becomes smaller as recording density increases. As a result, the magneto-static field (H d ) from the surrounding bits becomes stronger, and contributes more to the broadening of the switching field distribution (SFD) of targeted bit. This paper reports the investigations between possible bit-cell arrangements and SFD broadening caused by the magneto-static field. The possible bit-cell arrangements are categorized into three groups-square arrangement, isosceles triangular arrangement, and equilateral triangular arrangement. The influences of manufacturing induced deviations, including bit-cell position offset and bit-cell size variation, over the H d are also simulated. The results suggested that isosceles triangular arrangement can reduce the SFD broadening, without increasing the requirement on track positioning accuracy.