Atomically controlled Ge epitaxial growth on Si(1 0 0) in Ar-plasma-enhanced GeH4 reaction

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Published inMaterials science in semiconductor processing Vol. 8; no. 1-3; pp. 69 - 72
Main Authors Sugawara, Katsutoshi, Sakuraba, Masao, Murota, Junichi
Format Journal Article
LanguageEnglish
Published 01.02.2005
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Author Murota, Junichi
Sugawara, Katsutoshi
Sakuraba, Masao
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CitedBy_id crossref_primary_10_1016_j_tsf_2008_08_094
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crossref_primary_10_1016_j_tsf_2005_08_396
crossref_primary_10_1016_j_tsf_2005_07_332
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Title Atomically controlled Ge epitaxial growth on Si(1 0 0) in Ar-plasma-enhanced GeH4 reaction
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