Atomically controlled Ge epitaxial growth on Si(1 0 0) in Ar-plasma-enhanced GeH4 reaction

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 8; no. 1-3; pp. 69 - 72
Main Authors Sugawara, Katsutoshi, Sakuraba, Masao, Murota, Junichi
Format Journal Article
LanguageEnglish
Published 01.02.2005
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ISSN:1369-8001
DOI:10.1016/j.mssp.2004.09.078