The effects of vacuum annealing on the film properties of titanium boride (TiBx) grown on (100)Si substrate

• Published in: Metals and materials international Vol. 7; no. 4; pp. 359 - 365
• Main Authors: Lee, Young-Ki, Kim, Jung-Yuel, Lee, You-Kee, Lee, Min-Sang, Lee, Cheul-Ro, Park, Dong-Koo
• Format: Journal Article
• Language: English
• Published: Seoul Springer Nature B.V 01.07.2001
• Subjects: Annealing; Electrical resistivity; Intermetallics; Silicides; Silicon; Silicon substrates; Stress measurement; Studies; Titanium; Titanium borides
• ISSN: 1598-9623; 2005-4149; 1234-4320
• DOI: 10.1007/BF03186080

In order to investigate the effects of vacuum annealing on the properties of titanium boride films (TiBx) on a (100)Si substrate, TiBx/Si samples were prepared by the co-evaporation process and then annealed in the temperature range of 300[asymptotically =]1000°C. The interfacial reaction of TiBx/Si systems and the thermal stability of non-stoichiometric TiBx films (0≤B/Ti≤2.5) were investigated by means of sheet resistance, x-ray diffraction, transmission electron microscopy, x-ray photo-electron spectroscopy, and stress measurement. For TiBx samples with a ratio of B/Ti≥2.0, an apparent structural change is not observed even after annealing at 1000°C for 1 h. For samples with the ratio of B/Ti<2.0, however, there are two competitive solid phase reactions: the formation of a titanium silicide layer at the interface and the formation of a stoichiometric TiB^sub 2^ layer at the surface, indicating the salicide (self-aligned silicide) process. The sheet resistance and the film stress in the Ti/Si and TiB^sub x^/Si systems are explained well by the solid phase reactions.[PUBLICATION ABSTRACT]