A Simultaneous Energy Transferring SIBO Converter Achieving Low Ripple and High Efficiency for AMOLED Applications

• Published in: IEEE journal of solid-state circuits Vol. 59; no. 5; pp. 1497 - 1508
• Main Authors: Park, Hyo-Jin, Cho, Joo-Mi, Choi, Hyeon-Ji, Lee, Chan-Ho, Jeon, Young-Jun, Shin, Jeeyoung, Choi, Woong, Jeong, Junwon, Hong, Sung-Wan
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Active matrix displays; Active matrix organic light emitting diodes; Active-matrix organic light-emitting diode (AMOLED); Capacitors; Conduction losses; Energy conversion efficiency; high efficiency; High-voltage techniques; Hybrid power systems; Inductors; low ripple; Organic light emitting diodes; Reduction; Ripples; single inductor bipolar output converter; Stress; Switches; Switching loss
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2023.3314834

This article presents a single-inductor bipolar-output (SIBO) converter for active-matrix organic light-emitting diode (AMOLED) displays to reduce output ripples and enhance power conversion efficiency (PCE). We propose the simultaneous energy transferring SIBO (SETSIBO) converter, which generates bipolar outputs with only a two-phase operation and does not require additional switching. The hybrid power stage with a flying capacitor and two-phase operation reduces the dc value of the inductor current, which mitigates conduction losses and output ripples; moreover, the hybrid power stage allows the high-voltage switches in the conventional converters to be replaced by low-voltage switches. The inductor current reduction and the low-voltage power switch use improve the PCE. This article analyzes the proposed converter's output ripple reduction and the PCE improvements; furthermore, the load imbalance is effectively compensated with the proposed SETSIBO converter. The prototype of the proposed SETSIBO is fabricated in a 0.5-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS process. The measured ripples at positive and negative outputs are 24.5 and 28 mV, respectively, with a 300 mA load current <inline-formula> <tex-math notation="LaTeX">I_{\mathrm {o}} </tex-math></inline-formula>. The measured peak PCE is 94.1%, and the active area is 1.46 mm2.