Effects of hydrogen annealing temperature on the structural and physical properties of In1.925Cr0.05Cu0.025O3 thin films

• Published in: Physica. B, Condensed matter Vol. 621; p. 413290
• Main Authors: Baqiah, H., Ibrahim, N.B., Shaari, A.H., Al-Hada, Naif Mohammed, Talib, Z.A.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.11.2021; Elsevier BV
• Subjects: Annealing; Band gap; Cu doped In1.95Cr0.05O3; Hydrogen; Hydrogen annealing; Indium oxides; Magnetic behavior; Magnetic properties; Optical properties; Oxygen defects; Physical properties; Semiconducting behavior; Temperature; Thin films; Urbach energy; Oxygen defects; Cu doped In1.95Cr0.05O3; Urbach energy; Magnetic behavior; Semiconducting behavior; Hydrogen annealing
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2021.413290

The structural, optical, electrical and magnetic properties of In1.95Cr0.05Cu0.025O3 thin film annealed in hydrogen at different temperature (TH = 300, 400, 500, and 600 °C) were investigated. The film was amorphous at TH = 300 °C and had single phase In2O3 at TH = 400 °C, while mixed phases of In2O3, In and CuCr2O4 were observed at TH = 500 and 600 °C. At TH = 400 °C the film showed semiconducting like behavior. The film's transparency decreased with increasing TH, and optical band gap decreased from 3.67 eV for film annealed at TH = 400 °C to 3.0 eV for film annealed at TH = 600 °C. The magnetization increased for film annealed at TH = 400 and 500 °C while it disappeared at TH = 600 °C. The structural and physical properties were discussed and compared with that for film annealed in air at TAir = 500 °C. •The impacts of hydrogen annealing on the structural and physical properties of In1.925Cu0.025Cr0.05O3 are reported.•The hydrogen annealing temperature affected the film crystallization and phase formation.•At TH = 400 °C the film is single phase and exhibited semiconducting behavior.•The optical band gap decreased from 3.67 eV for film annealed at TH = 400 °C to 3.0 eV for film annealed at TH = 600 °C.•The magnetization increased for film annealed at TH = 400 and 500 °C while it disappeared at TH = 600 °C.