Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power

Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 8; no. 11; pp. 1429 - 1431
Main Authors Walpole, J.N., Donnelly, J.P., Groves, S.H., Missaggia, L.J., Woodhouse, J.D., Bailey, R.J., Napoleone, A.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1996
Subjects
Epitaxial growth
Optical amplifiers
Optical coupling
Optical design
Optical diffraction
Optical waveguides
Oscillators
Power amplifiers
Power generation
Power lasers
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Summary:Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of the power in the central lobe of a diffraction-limited far-field radiation pattern.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.541539